IS42RM32800E-6BLI
  • image of Memory>IS42RM32800E-6BLI
  • image of Memory>IS42RM32800E-6BLI
  • image of Memory>IS42RM32800E-6BLI
  • image of Memory>IS42RM32800E-6BLI
IS42RM32800E-6BLI
Memory
ISSI, Integrated Silicon Solution Inc
IC DRAM 256MBIT
-
托盘
100
-
: 100

240

18.54292

4450.3008

image of Memory>IS42RM32800E-6BLI
image of Memory>IS42RM32800E-6BLI
image of Memory>IS42RM32800E-6BLI
IS42RM32800E-6BLI
Memory
ISSI, Integrated Silicon Solution Inc
IC DRAM 256MBIT
-
托盘
100
-
TYPEDESCRIPTION
MfrISSI, Integrated Silicon Solution Inc
Series-
PackageTray
Part StatusNot For New Designs
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile
Memory Size256Mb (8M x 32)
Memory InterfaceParallel
Clock Frequency166 MHz
Write Cycle Time - Word, Page-
Access Time5.5 ns
Voltage - Supply2.3V ~ 3V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case90-TFBGA
Supplier Device Package90-TFBGA (8x13)
Base Product NumberIS42RM32800
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