IS42VM32160E-6BLI
  • image of Memory>IS42VM32160E-6BLI
  • image of Memory>IS42VM32160E-6BLI
  • image of Memory>IS42VM32160E-6BLI
  • image of Memory>IS42VM32160E-6BLI
IS42VM32160E-6BLI
Memory
ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT
-
托盘
100
-
: 100

240

21.06392

5055.3408

image of Memory>IS42VM32160E-6BLI
image of Memory>IS42VM32160E-6BLI
image of Memory>IS42VM32160E-6BLI
IS42VM32160E-6BLI
Memory
ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT
-
托盘
100
-
TYPEDESCRIPTION
MfrISSI, Integrated Silicon Solution Inc
Series-
PackageTray
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile
Memory Size512Mb (16M x 32)
Memory InterfaceParallel
Clock Frequency166 MHz
Write Cycle Time - Word, Page-
Access Time5.5 ns
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case90-TFBGA
Supplier Device Package90-TFBGA (8x13)
Base Product NumberIS42VM32160
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