IS61NLP25636A-200B3LI-TR
  • image of Memory>IS61NLP25636A-200B3LI-TR
  • image of Memory>IS61NLP25636A-200B3LI-TR
IS61NLP25636A-200B3LI-TR
Memory
ISSI, Integrated Silicon Solution Inc
IC SRAM 9MBIT P
-
卷带(TR)
100
-
: 100

2

29.4

58.8

image of Memory>IS61NLP25636A-200B3LI-TR
image of Memory>IS61NLP25636A-200B3LI-TR
IS61NLP25636A-200B3LI-TR
Memory
ISSI, Integrated Silicon Solution Inc
IC SRAM 9MBIT P
-
卷带(TR)
100
-
TYPEDESCRIPTION
MfrISSI, Integrated Silicon Solution Inc
Series-
PackageTape & Reel (TR)
Part StatusActive
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Synchronous, SDR
Memory Size9Mb (256K x 36)
Memory InterfaceParallel
Clock Frequency200 MHz
Write Cycle Time - Word, Page-
Access Time3.1 ns
Voltage - Supply3.135V ~ 3.465V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case165-TBGA
Supplier Device Package165-TFBGA (13x15)
Base Product NumberIS61NLP25636
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