IS61NLP25636B-200B3LI
  • image of Memory>IS61NLP25636B-200B3LI
  • image of Memory>IS61NLP25636B-200B3LI
IS61NLP25636B-200B3LI
Memory
ISSI, Integrated Silicon Solution Inc
IC SRAM 9MBIT P
-
托盘
100
-
: 100

144

25.13576

3619.54944

image of Memory>IS61NLP25636B-200B3LI
image of Memory>IS61NLP25636B-200B3LI
IS61NLP25636B-200B3LI
Memory
ISSI, Integrated Silicon Solution Inc
IC SRAM 9MBIT P
-
托盘
100
-
TYPEDESCRIPTION
MfrISSI, Integrated Silicon Solution Inc
Series-
PackageTray
Part StatusActive
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Synchronous, SDR
Memory Size9Mb (256K x 36)
Memory InterfaceParallel
Clock Frequency200 MHz
Write Cycle Time - Word, Page-
Access Time3.1 ns
Voltage - Supply3.135V ~ 3.465V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case165-TBGA
Supplier Device Package165-TFBGA (13x15)
Base Product NumberIS61NLP25636
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