IS61WV51216EDALL-20TLI
  • image of Memory>IS61WV51216EDALL-20TLI
  • image of Memory>IS61WV51216EDALL-20TLI
IS61WV51216EDALL-20TLI
Memory
ISSI, Integrated Silicon Solution Inc
IC SRAM 8MBIT P
-
托盘
100
-
: 100

135

24.49763

3307.18005

image of Memory>IS61WV51216EDALL-20TLI
image of Memory>IS61WV51216EDALL-20TLI
IS61WV51216EDALL-20TLI
Memory
ISSI, Integrated Silicon Solution Inc
IC SRAM 8MBIT P
-
托盘
100
-
TYPEDESCRIPTION
MfrISSI, Integrated Silicon Solution Inc
Series-
PackageTray
Part StatusActive
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Asynchronous
Memory Size8Mb (512K x 16)
Memory InterfaceParallel
Write Cycle Time - Word, Page20ns
Access Time20 ns
Voltage - Supply1.65V ~ 2.2V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case44-TSOP (0.400", 10.16mm Width)
Supplier Device Package44-TSOP II
Base Product NumberIS61WV51216
captcha

+86-1371375372/83782003

icb@ystjt.com
0