IS61WV51216EDBLL-8BLI-TR
  • image of Memory>IS61WV51216EDBLL-8BLI-TR
  • image of Memory>IS61WV51216EDBLL-8BLI-TR
IS61WV51216EDBLL-8BLI-TR
Memory
ISSI, Integrated Silicon Solution Inc
IC SRAM 8MBIT P
-
卷带(TR)
100
-
: 100

2

19.17936

38.35872

image of Memory>IS61WV51216EDBLL-8BLI-TR
image of Memory>IS61WV51216EDBLL-8BLI-TR
IS61WV51216EDBLL-8BLI-TR
Memory
ISSI, Integrated Silicon Solution Inc
IC SRAM 8MBIT P
-
卷带(TR)
100
-
TYPEDESCRIPTION
MfrISSI, Integrated Silicon Solution Inc
Series-
PackageTape & Reel (TR)
Part StatusActive
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Asynchronous
Memory Size8Mb (512K x 16)
Memory InterfaceParallel
Write Cycle Time - Word, Page8ns
Access Time8 ns
Voltage - Supply2.4V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case48-TFBGA
Supplier Device Package48-TFBGA (6x8)
Base Product NumberIS61WV51216
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