MT41K256M16TW-107 AUT:P TR
  • image of Memory>MT41K256M16TW-107 AUT:P TR
  • image of Memory>MT41K256M16TW-107 AUT:P TR
MT41K256M16TW-107 AUT:P TR
Memory
Micron Technology Inc.
IC DRAM 4GBIT P
-
卷带(TR)
100
-
: 100

2

22.715

45.43

image of Memory>MT41K256M16TW-107 AUT:P TR
image of Memory>MT41K256M16TW-107 AUT:P TR
MT41K256M16TW-107 AUT:P TR
Memory
Micron Technology Inc.
IC DRAM 4GBIT P
-
卷带(TR)
100
-
TYPEDESCRIPTION
MfrMicron Technology Inc.
SeriesAutomotive, AEC-Q100
PackageTape & Reel (TR)
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - DDR3L
Memory Size4Gb (256M x 16)
Memory InterfaceParallel
Clock Frequency933 MHz
Write Cycle Time - Word, Page-
Access Time20 ns
Voltage - Supply1.283V ~ 1.45V
Operating Temperature-40°C ~ 125°C (TC)
Mounting TypeSurface Mount
Package / Case96-TFBGA
Supplier Device Package96-FBGA (9x14)
Base Product NumberMT41K256M16
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