MT41K512M8V00HWC1
  • image of Memory>MT41K512M8V00HWC1
  • image of Memory>MT41K512M8V00HWC1
MT41K512M8V00HWC1
Memory
Micron Technology Inc.
IC DRAM 4GBIT P
-
散装
100
-
-
: 100

1

22.94

22.94

image of Memory>MT41K512M8V00HWC1
image of Memory>MT41K512M8V00HWC1
MT41K512M8V00HWC1
Memory
Micron Technology Inc.
IC DRAM 4GBIT P
-
散装
100
-
TYPEDESCRIPTION
MfrMicron Technology Inc.
Series-
PackageBulk
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - DDR3L
Memory Size4Gb (512M x 8)
Memory InterfaceParallel
Write Cycle Time - Word, Page-
Voltage - Supply1.283V ~ 1.45V
Operating Temperature0°C ~ 95°C (TC)
Mounting Type-
Package / Case-
Supplier Device Package-
Base Product NumberMT41K512M8
captcha

+86-1371375372/83782003

icb@ystjt.com
0