MT53D512M16D1DS-046 WT:D TR
  • image of Memory>MT53D512M16D1DS-046 WT:D TR
  • image of Memory>MT53D512M16D1DS-046 WT:D TR
MT53D512M16D1DS-046 WT:D TR
Memory
Micron Technology Inc.
IC DRAM 8GBIT 2
-
卷带(TR)
100
-
-
: 100

2

19.2

38.4

image of Memory>MT53D512M16D1DS-046 WT:D TR
image of Memory>MT53D512M16D1DS-046 WT:D TR
MT53D512M16D1DS-046 WT:D TR
Memory
Micron Technology Inc.
IC DRAM 8GBIT 2
-
卷带(TR)
100
-
TYPEDESCRIPTION
MfrMicron Technology Inc.
SeriesAutomotive, AEC-Q100
PackageTape & Reel (TR)
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR4
Memory Size8Gb (512M x 16)
Memory Interface-
Clock Frequency2.133 GHz
Write Cycle Time - Word, Page-
Voltage - Supply1.1V
Operating Temperature-30°C ~ 85°C (TC)
Mounting TypeSurface Mount
Package / Case200-WFBGA
Supplier Device Package200-WFBGA (10x14.5)
Base Product NumberMT53D512
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