MT53E128M32D2DS-046 AAT:A TR
  • image of Memory>MT53E128M32D2DS-046 AAT:A TR
  • image of Memory>MT53E128M32D2DS-046 AAT:A TR
MT53E128M32D2DS-046 AAT:A TR
Memory
Micron Technology Inc.
IC DRAM 4GBIT 2
-
卷带(TR)
100
-
-
: 100

2

19.175

38.35

image of Memory>MT53E128M32D2DS-046 AAT:A TR
image of Memory>MT53E128M32D2DS-046 AAT:A TR
MT53E128M32D2DS-046 AAT:A TR
Memory
Micron Technology Inc.
IC DRAM 4GBIT 2
-
卷带(TR)
100
-
TYPEDESCRIPTION
MfrMicron Technology Inc.
SeriesAutomotive, AEC-Q100
PackageTape & Reel (TR)
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR4
Memory Size4Gb (128M x 32)
Memory Interface-
Clock Frequency2.133 GHz
Write Cycle Time - Word, Page-
Voltage - Supply1.1V
Operating Temperature-40°C ~ 105°C (TC)
Mounting TypeSurface Mount
Package / Case200-WFBGA
Supplier Device Package200-WFBGA (10x14.5)
Base Product NumberMT53E128
captcha

+86-1371375372/83782003

icb@ystjt.com
0