R1EV58064BSCNBI-B2
  • image of Memory>R1EV58064BSCNBI-B2
  • image of Memory>R1EV58064BSCNBI-B2
R1EV58064BSCNBI-B2
Memory
Renesas Electronics America Inc
IC EEPROM 64KB
-
托盘
100
-
: 100

150

29.66293

4449.4395

image of Memory>R1EV58064BSCNBI-B2
image of Memory>R1EV58064BSCNBI-B2
R1EV58064BSCNBI-B2
Memory
Renesas Electronics America Inc
IC EEPROM 64KB
-
托盘
100
-
TYPEDESCRIPTION
MfrRenesas Electronics America Inc
SeriesR1EV58064BxxN
PackageTray
Part StatusLast Time Buy
Memory TypeNon-Volatile
Memory FormatEEPROM
TechnologyEEPROM
Memory Size64Kb (8K x 8)
Memory InterfaceParallel
Write Cycle Time - Word, Page10ms
Access Time100 ns
Voltage - Supply2.7V ~ 5.5V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case28-SOIC (0.330", 8.40mm Width)
Supplier Device Package28-SOP
captcha

+86-1371375372/83782003

icb@ystjt.com
0