R1EV58256BSCNBI-S2
  • image of Memory>R1EV58256BSCNBI-S2
  • image of Memory>R1EV58256BSCNBI-S2
R1EV58256BSCNBI-S2
Memory
Renesas Electronics America Inc
IC EEPROM 256KB
-
卷带(TR)
100
-
-
: 100

1

28.80375

28.80375

image of Memory>R1EV58256BSCNBI-S2
image of Memory>R1EV58256BSCNBI-S2
R1EV58256BSCNBI-S2
Memory
Renesas Electronics America Inc
IC EEPROM 256KB
-
卷带(TR)
100
-
TYPEDESCRIPTION
MfrRenesas Electronics America Inc
SeriesR1EV58256BxxN
PackageTape & Reel (TR)
Part StatusLast Time Buy
Memory TypeNon-Volatile
Memory FormatEEPROM
TechnologyEEPROM
Memory Size256Kb (32K x 8)
Memory InterfaceParallel
Write Cycle Time - Word, Page10ms
Access Time85 ns
Voltage - Supply2.7V ~ 5.5V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case28-SOIC (0.330", 8.40mm Width)
Supplier Device Package28-SOP
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