R1EV58256BTCNBI-B2
  • image of Memory>R1EV58256BTCNBI-B2
  • image of Memory>R1EV58256BTCNBI-B2
R1EV58256BTCNBI-B2
Memory
Renesas Electronics America Inc
IC EEPROM 256KB
-
托盘
100
-
-
: 100

180

28.58306

5144.9508

image of Memory>R1EV58256BTCNBI-B2
image of Memory>R1EV58256BTCNBI-B2
R1EV58256BTCNBI-B2
Memory
Renesas Electronics America Inc
IC EEPROM 256KB
-
托盘
100
-
TYPEDESCRIPTION
MfrRenesas Electronics America Inc
SeriesR1EV58256BxxN
PackageTray
Part StatusLast Time Buy
Memory TypeNon-Volatile
Memory FormatEEPROM
TechnologyEEPROM
Memory Size256Kb (32K x 8)
Memory InterfaceParallel
Write Cycle Time - Word, Page10ms
Access Time85 ns
Voltage - Supply2.7V ~ 5.5V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package28-TSOP I
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