W66CQ2NQUAHJ
  • image of Memory>W66CQ2NQUAHJ
  • image of Memory>W66CQ2NQUAHJ
W66CQ2NQUAHJ
Memory
Winbond Electronics
4GB LPDDR4X, DD
-
托盘
100
-
-
: 100

144

19.51715

2810.4696

image of Memory>W66CQ2NQUAHJ
image of Memory>W66CQ2NQUAHJ
W66CQ2NQUAHJ
Memory
Winbond Electronics
4GB LPDDR4X, DD
-
托盘
100
-
TYPEDESCRIPTION
MfrWinbond Electronics
Series-
PackageTray
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR4X
Memory Size4Gb (128M x 32)
Memory InterfaceLVSTL_11
Clock Frequency2.133 GHz
Write Cycle Time - Word, Page18ns
Access Time3.5 ns
Voltage - Supply1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature-40°C ~ 105°C (TC)
Mounting TypeSurface Mount
Package / Case200-WFBGA
Supplier Device Package200-WFBGA (10x14.5)
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